2SC5200-O – NPN power transistor 230V / 15A, TO-264 package

2SC5200-O NPN power transistor with a 230V breakdown voltage, current up to 15A and TO-264 package. Ideal for high-power applications such as hi-fi audio amplifiers, power supplies and power circuits.

SKU 1100-2SC5200-OEAN 8219671121026Item type: Assembled

Description

The 2SC5200-O is a high-performance silicon diffused-junction NPN transistor, designed for applications calling for high voltage, high current and thermal stability. With a VCEO breakdown voltage of 230 V, a collector current of up to 15 A and a power dissipation of 150 W, it suits high-power duties such as hi-fi audio amplifiers, power supplies and general power circuits.

The class “O” selection guarantees consistent gain, which also makes it ideal in push-pull configurations, paired with its complementary 2SA1943-O. With a transition frequency of 30 MHz, low saturation voltage and low output capacitance, it delivers fast response and high efficiency.

The TO-264 package, with its large heat-dissipating surface, makes it suitable even under heavy thermal load.

Key features
  • Collector-emitter saturation voltage (VCE(sat)): 0.4 V typical (IC = 8 A, IB = 0.8 A)
  • Collector cut-off current (ICBO): 5 μA max (VCB = 230 V, IE = 0 A, Ta = 25°C)
  • Emitter cut-off current (IEBO): 5 μA max (VEB = 5 V, IC = 0 A, Ta = 25°C)
  • Collector output capacitance (Cob): 200 pF (VCB = 10 V, IE = 0, f = 1 MHz)

Technical details

Type silicon diffused-junction NPN transistor
Collector-emitter voltage (VCEO) 230 V min
Collector current (IC) 15 A
Power dissipation (Pc) 150 W (Tc = 25°C)
Transition frequency (fT) 30 MHz typical (VCE = 5 V, IC = 1 A)
Junction temperature (Tj) 150 °C
Package TO-264
Gain class "O"

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