N-Channel MOSFET 200 Volt 18A
Power transistor in a TO-220AB package, with dissipation up to 150 watts and a gate threshold between 2 and 4 V.
SKU 1110-IRF640EAN 8219671082068Item type: AssembledMOSFETs, transistors & diodes
Description
N-channel power MOSFET. Maximum drain current 18 A, maximum drain-source voltage 200 V, maximum drain-source resistance 150 Mohm, maximum gate threshold voltage 4 V, minimum gate threshold voltage 2 V, maximum gate-source voltage ±20 V, package type TO-220AB, number of pins 3, maximum power dissipation 150 watts.
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