P-Channel MOSFET – 200 Volt 11A

Power transistor in a TO-220AB package, with dissipation up to 125 watts and gate voltage rated up to ±20 V.

SKU 1110-IRF9640EAN 5410329253431Item type: Assembled

Description

P-channel power MOSFET. Maximum drain current 11 A, maximum drain-source voltage 200 V, maximum drain-source resistance 500 Mohm, minimum gate threshold voltage 2 V, maximum gate-source voltage ±20 V, package type TO-220AB, 3 pins, maximum power dissipation 125 watts.

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